K4B4G1646E-BMMA DRAM Collection

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Samsung Memory Components: DDR4, DDR5 & GDDR6 SDRAM

Brand: Samsung

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Brand & Business Introduction

About Samsung Memory

Samsung’s DDR4, DDR5, and GDDR6 product lines represent the evolution of DRAM technology, each optimized for specific use cases:
DDR4: A mature, cost-effective standard for mainstream computing, industrial, and embedded applications.
DDR5: The next-generation high-speed standard, delivering double the bandwidth and improved power efficiency over DDR4, ideal for servers, workstations, and high-performance PCs.
GDDR6: Graphics-optimized DRAM designed for ultra-high bandwidth, powering modern graphics cards, gaming consoles, and AI accelerators.
Our Samsung Memory Supply Commitment
At HONGKONG LONG CHARM SCI-TECH CO., LIMITED, we specialize in distributing 100% authentic, original Samsung DRAM components sourced directly from Samsung’s excess factory inventory and authorized global distribution channels. Our mission is to provide businesses worldwide with reliable, cost-effective memory solutions for production, repair, R&D prototyping, and aftermarket replacement.

All Samsung memory chips we offer undergo rigorous multi-stage quality control (QC) testing to verify authenticity, performance, and full compliance with Samsung’s official specifications. This eliminates the risk of counterfeit or substandard memory that can cause system failures or performance issues.

We maintain a comprehensive inventory of Samsung DDR4, DDR5, and GDDR6 chips, with flexible minimum order quantities (MOQs), competitive volume pricing, and fast global shipping. For custom BOM (Bill of Materials) requests, bulk orders, technical specifications, or application-specific recommendations, please contact our sales team directly. We are dedicated to meeting your memory component needs with speed, reliability, and expert support.

1.Samsung DDR4 SDRAM Product Line

Part Number	Density	Organization / Bus Width	Speed	Process / Die Codename	Package	Voltage	Temperature Range	ECC Support
K4A4G085WG-BIWE	4Gb	512Mb×8	2133Mbps	1y nm E-die	78 FBGA	1.2V	0~85℃	NO
K4A4G085WG-BCWE	4Gb	512Mb×8	2400Mbps	1y nm E-die	78 FBGA	1.2V	0~85℃	NO
K4A4G165WG-BIWE	4Gb	256Mb×16	2133Mbps	1y nm E-die	96 FBGA	1.2V	0~85℃	NO
K4A4G165WG-BCWE	4Gb	256Mb×16	2400Mbps	1y nm E-die	96 FBGA	1.2V	0~85℃	NO
K4A4G085WG-BIWE-IND	4Gb	512Mb×8	2133Mbps	1y nm E-die	78 FBGA	1.2V	-40~85℃	NO
K4AAG085WC-BIWE	8Gb	1Gb×8	2666Mbps	1z nm M-die	78 FBGA	1.2V	0~85℃	NO
K4AAG085WC-BCWE	8Gb	1Gb×8	3200Mbps	1z nm M-die	78 FBGA	1.2V	0~85℃	NO
K4AAG165WC-BIWE	8Gb	512Mb×16	2666Mbps	1z nm M-die	96 FBGA	1.2V	0~85℃	NO
K4AAG165WC-BCWE	8Gb	512Mb×16	3200Mbps	1z nm M-die	96 FBGA	1.2V	0~85℃	NO
K4AAG085WC-BCWE-ECC	8Gb	1Gb×8	3200Mbps	1z nm M-die	78 FBGA	1.2V	0~85℃	YES
K4A8G085WC-BIWE	16Gb	2Gb×8	2666Mbps	1z nm A-die	78 FBGA	1.2V	0~85℃	NO
K4A8G085WC-BCWE	16Gb	2Gb×8	3200Mbps	1z nm A-die	78 FBGA	1.2V	0~85℃	NO
K4A8G085WC-BCWE-B	16Gb	2Gb×8	3600Mbps	1z nm B-die	78 FBGA	1.2V	0~85℃	NO
K4A8G165WC-BIWE	16Gb	1Gb×16	2666Mbps	1z nm A-die	96 FBGA	1.2V	0~85℃	NO
K4A8G165WC-BCWE	16Gb	1Gb×16	3200Mbps	1z nm A-die	96 FBGA	1.2V	0~85℃	NO
K4A8G085WC-BCWE-ECC	16Gb	2Gb×8	3200Mbps	1z nm A-die	78 FBGA	1.2V	0~85℃	YES
K4A8G165WC-BCWE-ECC	16Gb	1Gb×16	3200Mbps	1z nm A-die	96 FBGA	1.2V	0~85℃	YES
K4B8G085WC-BCWE	16Gb	2Gb×8	3200Mbps	1z nm M-die	78 FBGA	1.2V	0~85℃	NO
K4A16G085WC-BCWE	32Gb	4Gb×8	3200Mbps	1z nm A-die	96 FBGA	1.2V	0~85℃	YES
K4A16G165WC-BCWE	32Gb	2Gb×16	3200Mbps	1z nm A-die	96 FBGA	1.2V	0~85℃	YES

2.Samsung DDR5 SDRAM Product Line

Part Number	Capacity	Organization / Bus Width	Speed	Process / Common Name	Package	Voltage	Temperature Range	ODECC / Status
K4R4G085WD-BCQK	8Gb	1Gb×8	4800Mbps	1bnm M-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4R4G085WD-BDQK	8Gb	1Gb×8	5200Mbps	1bnm M-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4R8G085WD-BCQK	16Gb	2Gb×8	4800Mbps	1bnm M-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4R8G085WD-BDQK	16Gb	2Gb×8	5200Mbps	1bnm M-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4R8G085WD-BEQK	16Gb	2Gb×8	5600Mbps	1bnm M-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4R8G085WD-BFQK	16Gb	2Gb×8	6400Mbps	1bnm A-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4R8G085WD-BGQK	16Gb	2Gb×8	8000Mbps	1bnm A-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4R8G165WD-BEQK	16Gb	1Gb×16	5600Mbps	1bnm M-die	96 FBGA	1.1V	0°C ~ 85°C	Yes
K4R8G085WD-BEQK-ECC	16Gb	2Gb×8	5600Mbps	1bnm M-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4RMH086VD-BCQK	24Gb	3Gb×8	4800Mbps	1bnm New M-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4RMH086VD-BEQK	24Gb	3Gb×8	5600Mbps	1bnm New M-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4RMH086VD-BFQK	24Gb	3Gb×8	6400Mbps	1bnm A-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4RGH166VD-BEQK	32Gb	4Gb×8	5600Mbps	1bnm A-die	96 FBGA	1.1V	0°C ~ 85°C	Yes
K4RGH166VD-BFQK	32Gb	4Gb×8	6400Mbps	1bnm A-die	96 FBGA	1.1V	0°C ~ 85°C	Yes
K4RFE168VD-BFQK	64Gb	8Gb×8	6400Mbps	1bnm Flagship Grade	144 FBGA	1.1V	0°C ~ 85°C	Yes
K4RFE168VD-BGQK	128Gb	16Gb×8	6400Mbps	1bnm Flagship Grade	144 FBGA	1.1V	0°C ~ 85°C	Yes
K4RAH086VB-BCQK	16Gb	2Gb×8	4800Mbps	1bnm	82 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RAH086VB-BCWM	16Gb	2Gb×8	5600Mbps	1bnm	82 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RAH086VB-BIQK	16Gb	2Gb×8	4800Mbps	1bnm	82 FBGA	1.1V	-40°C ~ 95°C	Mass Production
K4RAH086VB-BIWM	16Gb	2Gb×8	5600Mbps	1bnm	82 FBGA	1.1V	-40°C ~ 95°C	Mass Production
K4RAH086VP-BCWM	16Gb	2Gb×8	5600Mbps	1bnm	82 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RAH086VE-BCWM	16Gb	2Gb×8	5600Mbps	12nm E-Die	82 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RAH165VB-BCQK	16Gb	1Gb×16	4800Mbps	1bnm	106 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RAH165VB-BCWM	16Gb	1Gb×16	5600Mbps	1bnm	106 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RAH165VB-BIQK	16Gb	1Gb×16	4800Mbps	1bnm	106 FBGA	1.1V	-40°C ~ 95°C	Mass Production
K4RAH165VB-BIWM	16Gb	1Gb×16	5600Mbps	1bnm	106 FBGA	1.1V	-40°C ~ 95°C	Mass Production
K4RAH165VP-BCWM	16Gb	1Gb×16	5600Mbps	1bnm	106 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RHE086VB-BCWM	24Gb	2Gb×8	5600Mbps	High Density	82 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RHE086VP-BCCP	24Gb	2Gb×8	5600Mbps	D1a	82 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RHE165VB-BCWM	24Gb	1Gb×16	5600Mbps	High Density	106 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RBH046VM-BCCP	32Gb	2Gb×4	6400Mbps	3DS Stacking	78 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RBH046VM-BCWM	32Gb	2Gb×4	5600Mbps	3DS Stacking	78 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RCH046VM-2CCM	32Gb	4Gb×4	5600Mbps	High Density	78 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RCH046VM-2CLP	32Gb	4Gb×4	6400Mbps	High Density	78 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RAH086VDBCWM	16Gb	2Gb×8	5600Mbps	D-Die	82 FBGA	1.1V	0°C ~ 85°C	Mass Production

Contact & Inquiry
We support sample trial, bulk procurement and long-term supply cooperation. For inventory status, technical datasheets or targeted quotations, please contact our sales team directly, and we will provide you with satisfactory memory component solutions.